Title
Fault-Tolerant Neuromorphic Computing Systems
Abstract
The emergence of non-volatile memories (NVM) such as resistive-oxide random access memory (RRAM), magnetoresistive random access memory (MRAM), and phase change memory (PCM) enables brain-inspired neuromorphic computing. However, due to immature fabrication process, NVMs are prone to process variations and manufacturing defects, which must be investigated for effective defect-to-fault mapping, high-coverage test generation, and diagnostics-driven yield learning. In this paper, we present a survey of research on fault modeling, test generation methodologies, and fault-tolerant design of neuromorphic computing systems based on RRAM and MRAM.
Year
DOI
Venue
2019
10.1109/ITC44170.2019.9000146
2019 IEEE International Test Conference (ITC)
Keywords
Field
DocType
RRAM,MRAM,fault-tolerant neuromorphic computing systems,nonvolatile memories,NVM,resistive-oxide random access memory,magnetoresistive random access memory,phase change memory,brain-inspired neuromorphic computing,immature fabrication process,manufacturing defects,defect-to-fault mapping,high-coverage test generation,diagnostics-driven yield learning,fault modeling,test generation methodologies,fault-tolerant design
Phase-change memory,Computer architecture,Computer science,Fault modeling,Neuromorphic engineering,Electronic engineering,Magnetoresistive random-access memory,Fault tolerance,Random access memory,Resistive random-access memory
Conference
ISSN
ISBN
Citations 
1089-3539
978-1-7281-4824-3
0
PageRank 
References 
Authors
0.34
27
3
Name
Order
Citations
PageRank
Arjun Chaudhuri1177.07
Mengyun Liu2348.19
K Chakrabarty38173636.14