Name
Title | ||
|---|---|---|
A Novel Low Power and Reduced Transistor Count Magnetic Arithmetic Logic Unit Using Hybrid STT-MTJ/CMOS Circuit |
Abstract | ||
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One of the major concern for CMOS technology is the increase in power dissipation as the technology node lowers down to deep submicron region. Magnetic tunnel junction (MTJ) working on Spin transfer torque (STT) switching mechanism is recognized as one of the most promising spintronic device for post CMOS era due to its non-volatility, high speed, high endurance, CMOS compatibility and mainly the low power dissipation which can offer the solutions for the problems posed by existing CMOS technology. We have proposed a novel logic-in-memory (LIM) architecture of magnetic arithmetic logic unit (P-MALU) based on hybrid STT-MTJ/CMOS circuits. Simulation results reveal that there is significant reduction in the total power dissipation and transistor count of arithmetic unit by 28.44 & x0025; and 29.16 & x0025; compared to double pass transistor logic based clocked CMOS ALU design (DPTL-(CMOS)-M-2-ALU), while 58.87 & x0025; and 45.16 & x0025; to modified magnetic arithmetic logic unit (M-MALU) respectively. Reduction in average power dissipation for logical unit is 37.61 & x0025; and 52.55 & x0025; along with 47.22 & x0025; and 42.42 & x0025; fewer transistors than DPTL-(CMOS)-M-2-ALU and M-MALU design respectively. Monte-Carlo(MC) simulation is then performed by incorporating process and mismatch variations for CMOS and extracted parameters of MTJ, to study the behavior of DPTL-(CMOS)-M-2-ALU, M-MALU and P-MALU designs in terms of power dissipation. All the simulation results reveal that the P-MALU is superior than other two ALU designs in terms of power dissipation, delay and device count. Further, the P-MALU circuit is extended for 4-bits arithmetic operations. Electrical simulations are performed to verify the functionality of the design for higher bit operations which demonstrates the feasibility of the proposed design in VLSI circuits. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1109/ACCESS.2019.2963727 | IEEE ACCESS |
Keywords | DocType | Volume |
Logic-in-memory,magnetic RAM,magnetic tunnel junction,non-volatile,tunnel magnetoresistance,spintronics,spin transfer torque | Journal | 8 |
ISSN | Citations | PageRank |
2169-3536 | 0 | 0.34 |
References | Authors | |
0 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Prashanth Barla | 1 | 0 | 0.34 |
| Vinod Kumar Joshi | 2 | 0 | 0.34 |
| Somashekara Bhat | 3 | 0 | 0.34 |