Title
Reliability of 3D NAND flash memory with a focus on read voltage calibration from a system aspect
Abstract
This paper discusses the reliability challenges of 3D NAND flash memory and their impact on flash management for enterprise storage applications. Emphasis is given to the read voltage calibration and its critical role in achieving low error-rates and low latency read performance, as well as in enabling accurate block health estimation. We present experimental results that demonstrate the improvements in endurance, retention and read-disturb from different read voltage calibration schemes, and we address their requirements from a system perspective, i.e., the accuracy vs. complexity trade-off. We discuss the above aspects for state-of-the-art 3D TLC and QLC NAND flash memory.
Year
DOI
Venue
2019
10.1109/NVMTS47818.2019.8986221
2019 19th Non-Volatile Memory Technology Symposium (NVMTS)
Keywords
Field
DocType
3D NAND flash,quad-level cell (QLC),triple-level cell (TLC),endurance,data retention,read voltage calibration
Nand flash memory,Enterprise storage,Data retention,Voltage,Electronic engineering,Latency (engineering),Materials science,Calibration,Embedded system
Conference
ISBN
Citations 
PageRank 
978-1-7281-4432-0
2
0.37
References 
Authors
7
8
Name
Order
Citations
PageRank
Nikolaos Papandreou125128.18
Nikolas Ioannou2719.86
Thomas P. Parnell3343.97
Roman Pletka422915.23
Milos Stanisavljevic520.37
Radu Stoica620.37
Sasa Tomic7182.98
Haralampos Pozidis819327.36