Name
Title | ||
|---|---|---|
WSe<inf>2</inf> based Valley-Coupled-Spintronic Devices for Low Power Non-Volatile Memories |
Abstract | ||
|---|---|---|
We propose valley-coupled spintronic devices based on monolayer WSe
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>
that utilize Valley-Spin Hall (VSH) effect to switch nano-magnets. The unique features of the proposed device are (a) the ability to switch magnets with perpendicular magnetic anisotropy (PMA) and (b) an integrated gate that can modulate the charge/spin current (IC/IS) flow. The former attribute results in high energy efficiency (compared to the Giant-Spin Hall (GSH) effect based devices with in-plane MA (IMA) magnets). The latter feature averts the need for additional access transistor in a memory array leading to high integration density. We experimentally measure the gate controllability of the current as well as the non-local resistance associated with VSH effect. Based on the measured data, we develop a simulation framework (using physical equations) to propose and analyze single-ended and differential VSH effect based magnetic memories (VSH-MRAMs). Compared to GSH-MRAMs, VSH-MRAMs achieve 45% lower write power (at iso-write time), 10% lower read power (at iso-sense margin) and 48% lower area. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/DRC46940.2019.9046398 | 2019 Device Research Conference (DRC) |
Keywords | DocType | ISSN |
GSH-MRAM,differential VSH effect based magnetic memories,VSH-MRAM,gate controllability,access transistor,in-plane MA magnets,giant-spin Hall effect,spin current flow,charge current flow,perpendicular magnetic anisotropy,monolayer WSe2,valley-spin Hall effect,WSe2 based valley-coupled-spintronic devices,nonlocal resistance,integration density,memory array,integrated gate,nanomagnets,low power nonvolatile memories,WSe2 | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-7281-2113-0 | 0 | 0.34 |
References | Authors | |
0 | 8 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Sandeep Krishna Thirumala | 1 | 6 | 3.19 |
| T. Hung | 2 | 0 | 0.34 |
| Arnab Raha | 3 | 1 | 2.80 |
| Niharika Thakuria | 4 | 0 | 0.34 |
| K. Cho | 5 | 0 | 0.34 |
| Vijay Raghunathan | 6 | 1932 | 170.13 |
| Zhihong Chen | 7 | 0 | 0.34 |
| Sumeet Kumar Gupta | 8 | 51 | 12.02 |