Name
Title | ||
|---|---|---|
Compact Modeling And Analysis Of Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction |
Abstract | ||
|---|---|---|
Recently, experimental results have demonstrated that perpendicular magnetic tunnel junction (p-MTJ) with the antiferromagnetic(AFM)/ferromagnetic (FM)/oxide structure can achieve field-free spin-orbit torque (SOT) switching since the AFM metal strip can not only generate the SOT, but also provide an exchange bias (H-EX), making it suitable for practical applications. However, owing to that the H-EX is weak, such field-free SOT switching is incomplete, thus resulting in severe switching reliability. In addition, a large SOT switching current (I-SOT) is also required, leading to high switching energy dissipation. In this paper, to address these issues, the voltage-controlled magnetic anisotropy (VCMA) is introduced to assist the SOT switching, and such novel switching method is referred as voltage-gated SOT (VGSOT). First, we develop a physics-based compact model for the three-terminal VGSOT-MTJ device, which includes three modules, i.e., the electrical module, the tunnel magnetoresistance module and the dynamic switching module. Then, the impact of the VCMA effect on the field-free SOT switching is investigated by solving a modified Landau-Lifshitz-Gilbert (LLG) equation with consideration of the VCMA, SOT and H-EX. Simulation results show that thanks to the introduction of the VCMA effect, the critical I-SOT can be reduced greatly, and the incomplete field-free SOT switching can be completed. With further analysis, we obtain a special switching condition, under which complete SOT field-free switching can be achieved with a shortest path and ultra-low power. Moreover, a novel write pulse scheme is proposed to achieve high speed and reliability. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1109/ACCESS.2020.2980073 | IEEE ACCESS |
Keywords | DocType | Volume |
Switches, Magnetic tunneling, Metals, Magnetization, Resistance, Tunneling magnetoresistance, Torque, p-MTJ, antiferromagnetic, field-free SOT switching, exchange bias, VCMA, voltage-gated SOT, compact model, ultra-low power, high speed and reliability | Journal | 8 |
ISSN | Citations | PageRank |
2169-3536 | 0 | 0.34 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kaili Zhang | 1 | 0 | 1.69 |
| De-ming Zhang | 2 | 19 | 4.81 |
| Chengzhi Wang | 3 | 0 | 0.34 |
| Lang Zeng | 4 | 18 | 4.67 |
| You Wang | 5 | 29 | 9.66 |
| Weisheng Zhao | 6 | 730 | 105.43 |