Name
Title | ||
|---|---|---|
A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile |
Abstract | ||
|---|---|---|
An insightful study of the virtual cathode is performed for the nanoscale ultra-thin body ultra-thin box SOI MOSFETs with a vertical Gaussian doping. And the physical, compact threshold voltage model is derived based on an analytical solution of two-dimensional (2D) Poisson equation with the evanescent-mode analysis. The accuracy of the model has been verified by 2D numerical device simulations using Sentaurus Technology Computer-Aided Design (TCAD) from Synopsys. Applying the newly developed model, the threshold voltage sensitivities to channel length, silicon-film thickness, buried-oxide thickness, and the channel doping concentration have been comprehensively investigated. Good agreements are achieved. Model predictions indicate that the individual UTBB-SOI MOSFET with a non-uniform doping profile is feasible at 10 nm scale. This work has both theoretical and practical significance and provide aids in promoting theoretical modeling research and applications of new UTBB-SOI based devices. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ICKII46306.2019.9042755 | 2019 IEEE 2nd International Conference on Knowledge Innovation and Invention (ICKII) |
Keywords | DocType | ISBN |
UTBB-SOI MOSFET,Gaussian doping,Analytical model,Virtual cathode | Conference | 978-1-7281-0123-1 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hongxia Chen | 1 | 0 | 0.34 |
| Sufen Wei | 2 | 0 | 0.34 |
| Jing Liu | 3 | 0 | 0.34 |
| Guohe Zhang | 4 | 0 | 0.34 |
| Cheng-Fu Yang | 5 | 1 | 3.75 |