Paper Info
Title
5.5 A 2.1e<sup>−</sup> Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology
Abstract
As the automotive and AI industries are expanding rapidly, global-shutter (GS) image sensors are playing a more significant role in the perception system. More specifically, GS image sensors are required in various fields involving IR, including the face-ID in mobile devices, the driver monitoring system in automotive applications, and factory automation. GS image sensors are necessary for these applications because they can capture freeze-frame images without motion distortion due to their advantage in the pixel operation method. The simultaneous pixel exposure and in-pixel storing capability allow GS image sensors to achieve high-quality imaging, while the sequential pixel exposure and readout of rolling-shutter (RS) image sensors results in image distortion known as the jello effect. For mobile and automotive applications, a small form factor while maintaining a low parasitic light sensitivity (PLS) and low noise is crucial. In conventional backside illuminated (BSI) charge-domain GS image sensors, a light-shielding structure over the storage area must be formed in order to suppress the influence of parasitic light during the readout operation. Therefore, the introduction of such a light-shielding structure reduces the effective photodiode area, which results in a loss of full-well capacity (FWC), light sensitivity of the sensor, and pixel scalability.
Year
DOI
Venue
2020
10.1109/ISSCC19947.2020.9063092
2020 IEEE International Solid- State Circuits Conference - (ISSCC)
Keywords
DocType
ISSN
photodiode area,jello effect,factory automation,driver monitoring system,AI industries,automotive industries,rolling-shutter image sensors,illuminated-pixel voltage-domain global shutter,parasitic light sensitivity backside,simultaneous pixel exposure,pixel operation method,freeze-frame images,CMOS image sensors,high-capacity DRAM capacitor technology,temporal noise,light-shielding structure,low parasitic light sensitivity,automotive applications,image distortion,sequential pixel exposure,high-quality imaging,in-pixel storing capability
Conference
0193-6530
ISBN
Citations 
PageRank 
978-1-7281-3206-8
0
0.34
References 
Authors
2
28
Name
Order
Citations
PageRank
Jaekyu Lee101.69
Seung Sik Kim200.34
In-Gyu Baek311.03
Heesung Shim400.34
J.-T. Kim55819.52
Taehyoung Kim600.34
Jungchan Kyoung700.34
Dongmo Im800.68
Jinyong Choi900.68
KeunYeong Cho1000.34
Daehoon Kim1100.34
Haemin Lim1200.34
Min-Woong Seo1311.03
juyoung kim1402.70
Doowon Kwon1501.35
Jiyoun Song1611.03
Jiyoon Kim1700.34
Min-Ho Jang1811.52
Joosung Moon1900.34
Hyunchul Kim2000.68
Chong Kwang Chang2100.34
Jingyun Kim2201.01
Kyoungmin Koh2301.01
Hanjin Lim2400.68
JungChak Ahn2543.11
Hyeongsun Hong2600.34
Kyupil Lee2711.37
Ho-Kyu Kang2801.35