Name
Title | ||
|---|---|---|
How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights & Design Guidelines for Self-Protected Concepts |
Abstract | ||
|---|---|---|
New design approach for improving ESD robustness of High voltage LDMOS devices is presented using detailed 3D TCAD simulations by developing physical insights and engineering approaches for moving filaments. (i) NPN turn -on engineering by using an optimum P-well profile & substrate biasing and (ii) filament width engineering by using optimum drain diffusion length (DL), shows how static filament can be modified to achieve dynamic (moving) nature. This approach resulted in 10× improvement in ESD robustness for self-protecting concepts. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1109/IRPS45951.2020.9128332 | 2020 IEEE International Reliability Physics Symposium (IRPS) |
Keywords | DocType | ISSN |
Electrostatic Discharge,Laterally Double Diffused MOS (LDMOS),Current Filaments | Conference | 1541-7026 |
ISBN | Citations | PageRank |
978-1-7281-3199-3 | 0 | 0.34 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Nagothu Karmel Kranthi | 1 | 0 | 0.68 |
| Chirag Garg | 2 | 0 | 0.34 |
| B. Sampath Kumar | 3 | 0 | 0.68 |
| Akram A. Salman | 4 | 1 | 4.64 |
| Gianluca Boselli | 5 | 21 | 6.91 |
| Mayank Shrivastava | 6 | 2 | 7.22 |