Name
Title | ||
|---|---|---|
Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices |
Abstract | ||
|---|---|---|
Power-scalability issues for longer pulse duration discharges (PW>100ns) in high voltage LDMOS-SCR devices is evaluated. The severity of the problem with increasing LDMOS voltage classes is highlighted with a need for newer design strategies. A systematic design approach is presented to evaluate the effect of different design parameters on LDMOS filament and SCR turn-on near the snapback region. Finally design guidelines are presented to improve the power scalability without compromising on its ON-state DC (functional) and Safe Operating Area (SOA) characteristics. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1109/IRPS45951.2020.9129624 | 2020 IEEE International Reliability Physics Symposium (IRPS) |
Keywords | DocType | ISSN |
Electrostatic Discharge,Laterally Double Diffused MOS (LDMOS),Silicon Controlled rectifier (SCR) | Conference | 1541-7026 |
ISBN | Citations | PageRank |
978-1-7281-3199-3 | 0 | 0.34 |
References | Authors | |
0 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Nagothu Karmel Kranthi | 1 | 0 | 0.68 |
| B. Sampath Kumar | 2 | 0 | 0.68 |
| Akram A. Salman | 3 | 1 | 4.64 |
| Gianluca Boselli | 4 | 21 | 6.91 |
| Mayank Shrivastava | 5 | 2 | 7.22 |