Name
Abstract | ||
|---|---|---|
The gm/ID methodology is applicable for the circuit design in advanced nanometer technologies. This work proposes a systematic parameter extraction process for a simplified EKV-model with only three model parameters which is applicable to all CMOS technologies. The extraction procedure relies only on the drain current for a sweep of the gate voltage without the need of additional extraction simulations in SPICE or parameters from the model card. Therefore, it is independent from the applied technology or the compact model of the SPICE simulation. For devices with short channel lengths, three variations of the EKV model were evaluated which consider velocity saturation. The resulting model provides good results compared to the SPICE simulation over the complete operation region of the technology for long and short channel devices while keeping simplicity for fast tool-based circuit design procedures and hand calculations. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.23919/MIXDES49814.2020.9155917 | 2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) |
Keywords | DocType | ISBN |
Transistor Modeling,Parameter Extraction,Design Process,EKV,MOSFET,FDSOI,Nanometer Technology | Conference | 978-1-7281-9781-4 |
Citations | PageRank | References |
0 | 0.34 | 3 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Konstantin Bajer | 1 | 0 | 0.34 |
| Steffen Paul | 2 | 142 | 40.96 |
| Dagmar Peters-Drolshagen | 3 | 39 | 12.87 |