Name
Abstract | ||
|---|---|---|
Processing-in-memory (PIM) exploits massive parallelism with high energy efficiency and becomes a promising solution to the von Neumann bottleneck. Recently, the emerging metal-oxide resistive random access memory (RRAM) shows its potential to construct a PIM architecture, because several stateful logic operations, e.g., IMP and NOR, can be executed in an RRAM crossbar in parallel. Previous synthe... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/TCAD.2020.3015465 | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems |
Keywords | DocType | Volume |
Parallel processing,Throughput,Convolution,Resistance,Random access memory,Imaging,Switches | Journal | 40 |
Issue | ISSN | Citations |
5 | 0278-0070 | 0 |
PageRank | References | Authors |
0.34 | 0 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Feng Wang | 1 | 1 | 1.36 |
| Guojie Luo | 2 | 363 | 39.53 |
| Guangyu Sun | 3 | 1920 | 111.55 |
| Jiaxi Zhang | 4 | 15 | 3.06 |
| Jinfeng Kang | 5 | 55 | 10.02 |
| Yuhao Wang | 6 | 62 | 8.97 |
| Dimin Niu | 7 | 609 | 31.36 |
| Hongzhong Zheng | 8 | 1 | 2.72 |