Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage

Paper Info

Title
Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage

Abstract
We demonstrate an SOT-MRAM, a nonvolatile memory using spin-orbit-torque (SOT) devices that have a read-disturbance-free characteristic. The SOT-MRAM fabricated by a 55-nm CMOS process achieves 60-MHz write and 90-MHz read operations with 1.2-V supply voltage under a magnetic-field-free condition. The SOT-MRAM is also implemented in a dual-port configuration utilizing three-terminal structure of the device, which realizes a wide bandwidth applicable to high-speed applications.

Year	DOI	Venue
2020	10.1109/VLSICircuits18222.2020.9162774	2020 IEEE Symposium on VLSI Circuits
Keywords	DocType	ISSN
MRAM,spin-orbit-torque,dual-port,spintronics	Conference	2158-5601
ISBN	Citations	PageRank
978-1-7281-9943-6	0	0.34
References	Authors
0	20

Authors (20 rows)

Cited by (0 rows)

References (0 rows)

Name	Order	Citations	PageRank
M. Natsui	1	0	0.34
A. Tamakoshi	2	0	0.34
Hiroaki Honjo	3	90	11.43
T. Watanabe	4	0	0.34
T. Nasuno	5	0	0.34
Chao Zhang	6	351	63.97
T. Tanigawa	7	0	0.34
Hiroyuki Inoue	8	21	10.67
Masaaki Niwa	9	0	1.35
T. Yoshiduka	10	0	0.34
Yasuo Noguchi	11	1	1.10
Mitsuo Yasuhira	12	1	1.10
Y. Ma	13	0	0.34
Hongbing Shen	14	4	1.69
Shunsuke Fukami	15	59	7.10
H. Sato	16	0	0.68
Ikeda, S.	17	36	5.83
Hideo Ohno	18	123	33.57
Tetsuo Endoh	19	155	35.26
Takahiro Hanyu	20	441	78.58