Title
Dual-Interlocked-Storage-Cell-Based Double-Node-Upset Self-Recoverable Flip-Flop Design for Safety-Critical Applications
Abstract
This paper presents a novel dual-interlocked storagecell (DICE)-based double-node-upset (DNU) self-recoverable, namely DURI-FF, in the nano-scale CMOS technology. The master latch of the DURI-FF cell consists of three transmission gates (TGs) and three interlocked DICEs with three common nodes. The common nodes are connected to TGs for value initialization. The slave latch of the DURI-FF cell comprises six TGs, six inverters and three interlocked DICEs. The outputs of the inverters respectively feed the internal nodes of the slave latch. The interlocked DICEs make the master latch and the slave latch DNU self-recoverable. Simulation results validate the DNU self-recoverability of the proposed DURI-FF cell. Moreover, compared with the state-of-the-art hardened flip-flop cells, the proposed DURI-FF cell achieves roughly 43% delay reduction at the cost of moderate silicon area and power dissipation.
Year
DOI
Venue
2020
10.1109/ISCAS45731.2020.9181135
ISCAS
DocType
Citations 
PageRank 
Conference
0
0.34
References 
Authors
0
8
Name
Order
Citations
PageRank
Aibin Yan1208.25
Zhelong Xu202.03
Jie Cui36011.46
Zuobin Ying4167.37
Zhengfeng Huang58430.14
Huaguo Liang621633.27
Patrick Girard777689.03
Xiaoqing Wen879077.12