Title
Power Loss Analysis In A Sic/Igbt Propulsion Inverter Including Blanking Time, Mosfet'S Reverse Conduction And The Effect Of Thermal Feedback Using A Pmsm Model
Abstract
This paper presents a comparison of power losses for two silicon carbide (SiC) and one silicon insulated gate bipolar transistor (Si IGBT) power modules in a three-phase inverter, when considering the effect of blanking time and the MOSFET's reverse conduction. The total power losses versus different switching frequencies are also compared for the three inverters. The focus of this paper is to determine the influence of junction temperature and thermal feedback on the power loss calculation. The analysis shows that, without accounting for the thermal feedback, the loss levels are substantially underestimated, 11-15% on the conduction losses of the SiC inverters and up to 18% on the switching losses of the IGBT inverter. The data is derived at a chosen high torque, low speed operating point of a permanent magnet synchronous machine (PMSM). The operating point is considered as a worse operating condition from the power loss perspective.
Year
DOI
Venue
2020
10.1109/IECON43393.2020.9254297
IECON 2020: THE 46TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY
Keywords
DocType
ISSN
Silicon Carbide (SiC), Voltage Source Inverters (VSI), MOSFET Reverse Conduction, Thermal Feedback, Electric Vehicle
Conference
1553-572X
Citations 
PageRank 
References 
0
0.34
0
Authors
3
Name
Order
Citations
PageRank
Sepideh Amirpour100.34
torbjorn thiringer2156.29
Dan Hagstedt300.34