Abstract | ||
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The design of a 100 kHz frequency reference based on the electron mobility in a MOS transistor is presented. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for Wireless Sensor Networks (WSN) applications. After one-point calibration the spread of its output frequency is less than 1.1% (3 sigma) over the temperature range from -22 degrees C to 85 degrees C. Fabricated in a baseline 65-nm CMOS technology, the frequency reference occupies 0.11 mm(2) and draws 34 A from a 1.2-V supply at room temperature. |
Year | DOI | Venue |
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2008 | 10.1109/ESSCIRC.2008.4681853 | Proceedings of the European Solid-State Circuits Conference |
DocType | ISSN | Citations |
Conference | 1930-8833 | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
---|---|---|---|
Fabio Sebastiano | 1 | 158 | 29.99 |
Lucien J. Breems | 2 | 99 | 20.57 |
Kofi A. A. Makinwa | 3 | 506 | 105.58 |
Salvatore Drago | 4 | 50 | 5.30 |
Domine M. W. Leenaerts | 5 | 221 | 47.32 |
Bram Nauta | 6 | 1770 | 256.74 |