Abstract | ||
---|---|---|
In this paper we present the design of a compact and broadband transformer-coupled power amplifier in a 0.15μm GaAs technology. The power amplifier achieves an output power of 26.5dBm and 31% power added efficiency, 12.6dB of small signal gain with a fractional bandwidth of 40%. The amplifier enables up to 21.6dBm, 19.9dBm of average output power while amplifying a 6Gb/s, 9Gb/s 64-QAM signal respectively at 28GHz with an EVM<; -25dB without any digital pre-distortion. To the author's knowledge, this is the first time transformer-coupled matching networks are used in a GaAs power amplifier leading to very compact matching structures compared to bulky transmission line. |
Year | DOI | Venue |
---|---|---|
2019 | 10.1109/BCICTS45179.2019.8972712 | 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
Keywords | DocType | ISBN |
Power Amplifier,Ka-band,5G,Transformer-Coupled,Millimeter wave integrated circuits | Conference | 978-1-7281-0587-1 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
2 |
Name | Order | Citations | PageRank |
---|---|---|---|
Valdrin Qunaj | 1 | 0 | 1.01 |
Patrick Reynaert | 2 | 463 | 76.50 |