Title
Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications
Abstract
This paper presents a logic inverter circuit consisting of both CMOS and GaN devices to drive high-torque DC motors requiring high voltages in various robotics applications. The GaN+CMOS inverter can be monolithically integrated with CMOS digital circuits on a single die, accommodating a 5V CMOS logic level input and providing a 30V output voltage using depletion-mode GaN HEMTs without negative gate bias circuitry. Electro-thermal simulations are also performed to analyze the temperature of CMOS devices affected by nearby GaN HEMTs.
Year
DOI
Venue
2020
10.1109/BCICTS48439.2020.9392934
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Keywords
DocType
ISBN
GaN HEMT,CMOS,monolithic integration,high voltage logic circuit,high torque motor driver,electro-thermal analysis
Conference
978-1-7281-9750-0
Citations 
PageRank 
References 
0
0.34
0
Authors
8