Name
Title | ||
|---|---|---|
Traps Based Reliability Barrier On Performance And Revealing Early Ageing In Negative Capacitance Fet |
Abstract | ||
|---|---|---|
Trap charges influence the reliability of semiconductor devices, which is an essential measure of performance evaluation especially for high-performance circuits and safety-critical applications. In this paper for the first time, the individual and combined impact of Si-SiO2 interface traps and Ferroelectric (FE) bulk traps on the performance of the Negative Capacitance (NC) FDSOI FET have been investigated. Our investigation shows: 1) The high interface electric field and variation of trap induced polarization causes early aging effect; 2) Performance degradation due to FE bulk traps that change the vertical field distribution through polarization variation in the FE oxide layer of NC-pFDSOI FET; 3) The combined effect of interface traps and the bulk traps predominantly degrades the performance of NC FDSOI FET as compared to the baseline pFDSOI FET. Our results using well-calibrated TCAD models reveal that the reliability barrier due to joint impact of interface traps and bulk traps, limits the low power performance of NCFET. |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/IRPS46558.2021.9405185 | 2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) |
Keywords | DocType | ISSN |
Bulk traps, ferroelectric, interface traps, negative capacitance, polarization switching | Conference | 1541-7026 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Aniket Gupta | 1 | 0 | 0.34 |
| Govind Bajpai | 2 | 0 | 0.34 |
| Priyanshi Singhal | 3 | 0 | 0.34 |
| Navjeet Bagga | 4 | 0 | 0.34 |
| Om Prakash | 5 | 14 | 4.52 |
| Shashank Banchhor | 6 | 0 | 0.34 |
| Hussam Amrouch | 7 | 251 | 50.22 |
| Nitanshu Chauhan | 8 | 0 | 0.34 |