Name
Title | ||
|---|---|---|
Self-Referenced Single-Ended Resistance Monitoring Write Termination Scheme for STT-RAM Write Energy Reduction |
Abstract | ||
|---|---|---|
Essential design requirements for a sense amplifier (SA) used in the resistance monitoring write termination (RM-WT) scheme are suggested to reduce the write energy of spin-transfer-torque random access memory (STT-RAM) while achieving a write pass yield comparable to that of a conventional write operation. In addition, a self-referenced single-ended RM-WT (SS-RM-WT) scheme is proposed. To reduce ... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/TCSI.2021.3069710 | IEEE Transactions on Circuits and Systems I: Regular Papers |
Keywords | DocType | Volume |
Magnetic tunneling,Switches,Transistors,Sensors,Resistance,Phase change random access memory,Magnetic separation | Journal | 68 |
Issue | ISSN | Citations |
6 | 1549-8328 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Sara Choi | 1 | 4 | 2.17 |
| Hong Keun Ahn | 2 | 0 | 1.01 |
| Byungkyu Song | 3 | 23 | 5.94 |
| Seung H. Kang | 4 | 139 | 12.36 |
| Seong-ook Jung | 5 | 332 | 53.74 |