Name
Abstract | ||
|---|---|---|
Quantum confinement in 3-D device structure together with the newly employed materials like silicon-germanium (SiGe) in advanced technologies (e.g., FinFET, nanowire, nanosheets, etc.) makes transistors seriously suffer from localized self-heating effects in which generated heat within the transistor’s channel is trapped inside. This is mainly due to the much lower channel and surrounding material... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/VTS50974.2021.9441002 | 2021 IEEE 39th VLSI Test Symposium (VTS) |
Keywords | DocType | ISSN |
Temperature measurement,Heating systems,Solid modeling,Semiconductor device measurement,Very large scale integration,FinFETs,Nanoscale devices | Conference | 1093-0167 |
ISBN | Citations | PageRank |
978-1-6654-1949-9 | 1 | 0.36 |
References | Authors | |
0 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Om Prakash | 1 | 14 | 4.52 |
| Chetan K. Dabhi | 2 | 5 | 0.79 |
| Yogesh S. Chauhan | 3 | 2 | 1.42 |
| Hussam Amrouch | 4 | 251 | 50.22 |