Title
Defect and Fault Modeling Framework for STT-MRAM Testing
Abstract
STT-MRAM mass production is around the corner as major foundries worldwide invest heavily on its commercialization. To ensure high-quality STT-MRAM products, effective yet cost-efficient test solutions are of great importance. This article presents a systematic device-aware defect and fault modeling framework for STT-MRAM to derive accurate fault models which reflect the physical defects appropria...
Year
DOI
Venue
2021
10.1109/TETC.2019.2960375
IEEE Transactions on Emerging Topics in Computing
Keywords
DocType
Volume
Magnetic tunneling,Switches,Resistors,Multiprotocol label switching,Magnetic anisotropy,Magnetization,Saturation magnetization
Journal
9
Issue
ISSN
Citations 
2
2168-6750
1
PageRank 
References 
Authors
0.36
0
8