Title
PROTON: Post-Synthesis Ferroelectric Thickness Optimization for NCFET Circuits
Abstract
For the first time, we demonstrate an optimization technique to synthesize circuits in the Negative Capacitance FET (NCFET) technology. NCFET is a rapidly emerging technology to replace the currently employed CMOS technology due to its profound ability to overcome the fundamental limit in scaling along with its full compatibility with the existing fabrication process. This is achieved by replacing...
Year
DOI
Venue
2021
10.1109/TCSI.2021.3103860
IEEE Transactions on Circuits and Systems I: Regular Papers
Keywords
DocType
Volume
Iron,Solid modeling,Capacitance,Logic gates,Standards,FinFETs,Semiconductor device modeling
Journal
68
Issue
ISSN
Citations 
10
1549-8328
0
PageRank 
References 
Authors
0.34
0
5
Name
Order
Citations
PageRank
Sami Salamin152.90
Georgios Zervakis2498.33
Y. S. Chauhan3166.46
J. Henkel44471366.50
Hussam Amrouch525150.22