Name
Title | ||
|---|---|---|
Modelling of Electrostatics and Transport in GaN-Based HEMTs under Non-Equilibrium Conditions |
Abstract | ||
|---|---|---|
High electron mobility transistors (HEMTs) consisting of GaN and its alloys, most commonly AlGaN, have been gaining popularity as the next generation of high-speed devices for radiofrequency and power applications. Although a high concentration of 2D electrons in such structures can be obtained even in equilibrium, i.e. with a zero gate bias, in recent years there has been a tendency of developing... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.23919/MIPRO52101.2021.9597025 | 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO) |
Keywords | DocType | ISBN |
Radio frequency,HEMTs,Logic gates,Electron mobility,Mathematical models,Numerical models,Wide band gap semiconductors | Conference | 978-953-233-101-1 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ivan Berdalović | 1 | 0 | 0.34 |
| Mirko Poljak | 2 | 0 | 1.69 |
| Tomislav Suligoj | 3 | 1 | 9.41 |