Name
Title | ||
|---|---|---|
Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer |
Abstract | ||
|---|---|---|
Deposition of a nanometer-thin layer-stack of pure gallium and boron (PureGaB) on arsenic (As)-doped epitaxial germanium (Ge) forms a shallow-junction photodiode, reported to have almost ideal I-V characteristics, low saturation current densities, and high responsivity down to 255 nm wavelengths. In this work, different physical mechanisms that could explain the high anode Gummel number in PureGaB... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.23919/MIPRO52101.2021.9597002 | 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO) |
Keywords | DocType | ISBN |
Gallium,Simulation,Germanium,Semiconductor process modeling,Semiconductor diodes,Photodiodes,Junctions | Conference | 978-953-233-101-1 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| L. Marković | 1 | 0 | 0.34 |
| Tihomir Knezevic | 2 | 1 | 3.33 |
| Lis K. Nanver | 3 | 1 | 2.56 |
| Tomislav Suligoj | 4 | 1 | 9.41 |