Name
Abstract | ||
|---|---|---|
We analyze the carrier dynamics in MOSFETs under low-voltage operation. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically for a 90 nm CMOS technology. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering the carrier-transit delay in the compact MOSFET model. Long carrier transit delay under the low voltage switching-on operation results in long duration of the displacement current flow. On the other hand, the switching-off characteristics are independent of the bias condition. |
Year | DOI | Venue |
|---|---|---|
2009 | 10.1587/transele.E92.C.608 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | DocType | Volume |
carrier dynamics, low voltage, displacement current, continuity equation, carrier-transit delay, nonquasi-static effect, compact MOSFET model, driving capability, drift, diffusion, surface potential, circuit simulation | Journal | E92C |
Issue | ISSN | Citations |
5 | 0916-8524 | 0 |
PageRank | References | Authors |
0.34 | 0 | 11 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Masataka Miyake | 1 | 0 | 0.34 |
| Daisuke Hori | 2 | 0 | 0.34 |
| Norio Sadachika | 3 | 0 | 0.34 |
| Uwe Feldmann | 4 | 0 | 0.34 |
| Mitiko Miura-Mattausch | 5 | 11 | 16.18 |
| Hans Juergen Mattausch | 6 | 0 | 0.34 |
| Takahiro Iizuka | 7 | 2 | 3.79 |
| Kazuya Matsuzawa | 8 | 7 | 3.18 |
| Yasuyuki Sahara | 9 | 0 | 0.34 |
| Teruhiko Hoshida | 10 | 2 | 1.09 |
| Toshiro Tsukada | 11 | 0 | 0.34 |