Name
Abstract | ||
|---|---|---|
STT-MRAM is one of the most promising emerging non-volatile memory technologies. As its mass production and deployment in industry is around the corner, high-quality yet cost-efficient manufacturing test solutions are crucial to ensure the required quality of products being shipped to end customers. This paper focuses on STT-MRAM testing, covering three abstraction levels: manufacturing defects, f... |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/ITC50571.2021.00022 | 2021 IEEE International Test Conference (ITC) |
Keywords | DocType | ISSN |
memory test,device aware test,manufacturing test,STT MRAM,MTJ,manufacturing defect,fault model,robust design,magnetic coupling | Conference | 1089-3539 |
ISBN | Citations | PageRank |
978-1-6654-1695-5 | 1 | 0.35 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Lizhou Wu | 1 | 5 | 2.24 |
| Siddharth Rao | 2 | 11 | 2.23 |
| Mottaqiallah Taouil | 3 | 1 | 0.35 |
| E. J. Marinissen | 4 | 60 | 8.57 |
| G. Kar | 5 | 9 | 6.91 |
| Said Hamdioui | 6 | 887 | 118.69 |