Abstract | ||
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Carbon nanotube FETs (CNFETs) are emerging as an alternative to silicon devices for next-generation computing systems. However, imperfect carbon nanotube deposition during CNFET fabrication can lead to the formation of difficult-to-etch CNT aggregates in the active layer. These CNT aggregates can form parasitic CNFETs (para-FETs) that are modulated by adjoining gate contacts or back-end-of-line me... |
Year | DOI | Venue |
---|---|---|
2021 | 10.1109/ICCAD51958.2021.9643513 | 2021 IEEE/ACM International Conference On Computer Aided Design (ICCAD) |
Keywords | DocType | ISSN |
Silicon devices,Aggregates,Simulation,Layout,Wires,Optimization methods,Foundries | Conference | 1933-7760 |
ISBN | Citations | PageRank |
978-1-6654-4507-8 | 0 | 0.34 |
References | Authors | |
0 | 7 |
Name | Order | Citations | PageRank |
---|---|---|---|
Sanmitra Banerjee | 1 | 9 | 4.68 |
Arjun Chaudhuri | 2 | 17 | 7.07 |
Jinwoo Kim | 3 | 1 | 3.08 |
Gauthaman Murali | 4 | 4 | 3.27 |
Mark Nelson | 5 | 0 | 0.34 |
Sung Kyu Lim | 6 | 1688 | 168.71 |
Krishnendu Chakrabarty | 7 | 0 | 1.69 |