Title
ParaMitE: Mitigating Parasitic CNFETs in the Presence of Unetched CNTs
Abstract
Carbon nanotube FETs (CNFETs) are emerging as an alternative to silicon devices for next-generation computing systems. However, imperfect carbon nanotube deposition during CNFET fabrication can lead to the formation of difficult-to-etch CNT aggregates in the active layer. These CNT aggregates can form parasitic CNFETs (para-FETs) that are modulated by adjoining gate contacts or back-end-of-line me...
Year
DOI
Venue
2021
10.1109/ICCAD51958.2021.9643513
2021 IEEE/ACM International Conference On Computer Aided Design (ICCAD)
Keywords
DocType
ISSN
Silicon devices,Aggregates,Simulation,Layout,Wires,Optimization methods,Foundries
Conference
1933-7760
ISBN
Citations 
PageRank 
978-1-6654-4507-8
0
0.34
References 
Authors
0
7
Name
Order
Citations
PageRank
Sanmitra Banerjee194.68
Arjun Chaudhuri2177.07
Jinwoo Kim313.08
Gauthaman Murali443.27
Mark Nelson500.34
Sung Kyu Lim61688168.71
Krishnendu Chakrabarty701.69