Title
A High-Efficiency 142–182-GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-Based Power Combining Technique
Abstract
In this article, a high-efficiency broadband millimeter-wave (mm-Wave) integrated power amplifier (PA) with a low-loss slotline-based power combing technique is proposed. The proposed slotline-based power combiner consists of grounded coplanar waveguide (GCPW)-to-slotline transitions and folded slots to simultaneously achieve power combining and impedance matching. This technique provides a broadband parallel–series combining method to enhance the output power of PAs at mm-Wave frequencies while maintaining the compact area and high efficiency. As a proof of concept, a compact four-to-one hybrid power combiner is implemented in a 130-nm SiGe BiCMOS back-end-of-line (BEOL) process, which leads to a small die area of 126 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}\,\,\times $ </tex-math></inline-formula> 240 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> and a low measured insertion loss of 0.5 dB. The 3-dB bandwidth is over 80 GHz covering the whole G-band (140–220 GHz). Based on this structure, a high-efficiency mm-Wave PA has been fabricated in the 130-nm SiGe BiCMOS technology. The three-stage PA achieves a peak power gain of 30.7 dB, 3-dB small-signal gain bandwidth of 40 GHz from 142 to 182 GHz, a measured maximum saturated output power of 18.1 dBm, and a peak power-added efficiency (PAE) of 12.4% at 161 GHz. The extremely compact power combining methodology leads to a small core area of 488 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}\,\,\times $ </tex-math></inline-formula> 214 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> and an output power per unit die area of 662 mW/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .
Year
DOI
Venue
2022
10.1109/JSSC.2021.3107428
IEEE Journal of Solid-State Circuits
Keywords
DocType
Volume
Broadband power combiner,grounded coplanar waveguide (GCPW),high-efficiency,hybrid power combining,mm-Wave power amplifier (PA),SiGe,slotline,transformer
Journal
57
Issue
ISSN
Citations 
2
0018-9200
0
PageRank 
References 
Authors
0.34
0
8
Name
Order
Citations
PageRank
Xingcun Li100.68
Wenhua Chen27416.35
Shuyang Li300.68
Yunfan Wang400.68
Fei Huang500.34
Xiang Yi600.34
Ruonan Han715227.20
Zhenghe Feng810.71