Name
Abstract | ||
|---|---|---|
Amorphous oxide semiconductors (AOS) can be processed at low-temperature and their field-effect transistors (FETs) have demonstrated very low off-state current [1], offering promise for low-power back-end-of-line (BEOL) applications. Indium tin oxide (ITO) FETs have recently shown good characteristics [2] and good mobility (>50 cm
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V
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s
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[3]), but their stability and degradation remain unknown, e.g. given the mobility-stability trade-off in AOS [4], [5]. Here we investigate, for the first time, the influence of gate dielectric material and thickness on ITO-FET stability, which impacts bias stress through trap states. We find that HfO
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is more stable than Al
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O
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as a gate dielectric for ITO FETs, which contradicts previous stability studies of other AOS. |
Year | DOI | Venue |
|---|---|---|
2022 | 10.1109/DRC55272.2022.9855789 | 2022 Device Research Conference (DRC) |
Keywords | DocType | ISSN |
bias stress stability,ITO transistors,dielectric properties,amorphous oxide semiconductors,field-effect transistors,off-state current,low-power back-end-of-line applications,BEOL,mobility-stability trade-off,AOS,gate dielectric material,ITO-FET stability,trap states,stability studies,indium tin oxide FET,indium tin oxide,ITO,HfO2 | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-6654-9884-5 | 0 | 0.34 |
References | Authors | |
0 | 10 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Lauren Hoang | 1 | 0 | 0.34 |
| Alwin Daus | 2 | 0 | 0.34 |
| Sumaiya Wahid | 3 | 0 | 0.34 |
| Jimin Kwon | 4 | 0 | 0.34 |
| Jung-Soo Ko | 5 | 0 | 0.34 |
| Shengjun Qin | 6 | 0 | 0.34 |
| Mahnaz Islam | 7 | 0 | 0.34 |
| Krishna C. Saraswat | 8 | 186 | 30.79 |
| H.-S Philip Wong | 9 | 0 | 0.34 |
| Eric Pop | 10 | 50 | 12.07 |