Name
Title | ||
|---|---|---|
Characterization Of Germanium Nanocrystallites Grown On Sio2 By A Conductive Afm Probe Technique |
Abstract | ||
|---|---|---|
Hydrogenated germanium films were fabricated in the thickness range of 7-98nm on SiO2 at 150 degrees C by an rf glow discharge decomposition of 0.25% GeH4 diluted with H-2, and the nucleation and growth of Ge nanocrystallites were measured from topographic and current images simultaneously taken by a conductive AFM probe after Cr contact formation on films so prepared. We have demonstrated that current images show fine grains in comparison with topographic images and the lateral evolution of the Ge grains with progressive film growth. The contrast in current images can be interpreted in terms of the difference in election concentration between nanocrystalline grains and their boundaries. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1093/ietele/e88-c.4.705 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | DocType | Volume |
nanocrystal, AFM, conducting probe, local characterization | Journal | E88C |
Issue | ISSN | Citations |
4 | 0916-8524 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Katsunori Makihara | 1 | 4 | 6.33 |
| Yoshihiro Okamoto | 2 | 3 | 3.15 |
| Hideki Murakami | 3 | 9 | 6.82 |
| Seiichiro Higashi | 4 | 4 | 4.20 |
| Seiichi Miyazaki | 5 | 8 | 10.52 |