Name
Affiliation
Papers
CHAO-SUNG LAI
Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan
17
Collaborators
Citations 
PageRank 
60
6
7.19
Referers 
Referees 
References 
36
10
3
Title
Citations
PageRank
Year
Flexible Textile-Based Pressure Sensing System Applied in the Operating Room for Pressure Injury Monitoring of Cardiac Operation Patients.00.342020
Prediction of 30-Day Readmission for COPD Patients Using Accelerometer-Based Activity Monitoring.00.342020
Surface Acoustic Wave Sensor for C-Reactive Protein Detection.00.342020
Levels Of Activity Identification & Sleep Duration Detection With A Wrist-Worn Accelerometer-Based Device00.342017
The impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET.00.342013
Gadolinium-based metal oxide for nonvolatile memory applications.00.342012
Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles.00.342012
pH sensing reliability of flexible ITO/PET electrodes on EGFETs prepared by a roll-to-roll process.20.692012
Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell.00.342012
Optimization of urea-EnFET based on Ta2O5 layer with post annealing.20.552011
A novel light-addressable potentiometric sensors set-up with LCD projector as scanning light source00.342011
Novel flash ion sensitive field effect transistor for chemical sensor applications00.342011
Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity00.342010
Characteristics optimization of N2O annealing on tungsten nanocrystal with W/Si dual-sputtered method for nonvolatile memory application00.342010
Characteristics of pH sensors fabricated by using protein-mediated CdSe/ZnS quantum dots00.342010
Non-ideal effects improvement of SF6 plasma treated hafnium oxide film based on electrolyte–insulator–semiconductor structure for pH-sensor application00.342010
Optimization of a PVC Membrane for Reference Field Effect Transistors.21.222009