Author Info
Name
Affiliation
Papers
M. LANZA
Dept. Enginyeria Electrònica, Universitat Autònoma de Barcelona, Edifici Q, 08193 Bellaterra, Spain
3
Collaborators
Citations 
PageRank 
12
1
1.30
Referers 
Referees 
References 
7
2
1
Title
Citations
PageRank
Year
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements10.632010
Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale00.342009
Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM00.342007