Name
Title | ||
|---|---|---|
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements |
Abstract | ||
|---|---|---|
In this work, a Conductive Atomic Force Microscopy (CAFM) working in contact mode has been used to compare the measured electrical properties and breakdown (BD) on ultra thin high-k dielectrics, when different environmental conditions are used. In particular, the effect of the environment on the conductivity measurements, the lateral resolution in current images and the lateral propagation of the BD event will be analyzed in air, dry nitrogen (N2) and Ultra High Vacuum (UHV). |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1016/j.microrel.2010.07.049 | Microelectronics Reliability |
Keywords | Field | DocType |
ultra high vacuum,atomic force microscopy,nitrogen | Conductivity,Analytical chemistry,Conductive atomic force microscopy,Dielectric,Lateral resolution,Ultra-high vacuum,Chemistry,Electrical measurements,Electronic engineering,High-κ dielectric,Environmental effect,Optoelectronics | Journal |
Volume | Issue | ISSN |
50 | 9 | 0026-2714 |
Citations | PageRank | References |
1 | 0.63 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Lanza | 1 | 1 | 1.30 |
| M. Porti | 2 | 5 | 3.78 |
| M. Nafría | 3 | 60 | 7.58 |
| X. Aymerich | 4 | 21 | 12.21 |
| E. Whittaker | 5 | 1 | 0.63 |
| B. Hamilton | 6 | 1 | 0.63 |