A Caddemi - Citegraph

Author Info

Name	Affiliation	Papers
A CADDEMI	Dipartimento di Fisica della Materia e Tecnologie Fisiche Avanzate and INFM, University of Messina, Salita Sperone 31, 98166 S. Agata, Messina, Italy	17
Collaborators	Citations	PageRank
29	20	12.87
Referers	Referees	References
50	44	20

Publications (17 rows)

Collaborators (29 rows)

Referers (50 rows)

Referees (44 rows)

Title	Citations	PageRank	Year
Empowering Blind People Mobility: A Millimeter-Wave Radar Cane	0	0.34	2020
Feasibility Study to Preserve the Health of an Industry 4.0 Worker: a Radar System for Monitoring the Sitting-Time	1	0.39	2019
Light activation of noise at microwave frequencies: a study on scaled gallium arsenide HEMT's.	0	0.34	2018
A Low-Cost Smart Microwave Radar for Short Range Measurements.	0	0.34	2017
A feasibility study of a compact radar system for autonomous walking of blind people	1	0.48	2016
Microwave effects of UV light exposure of a GaN HEMT: Measurements and model extraction.	1	0.63	2016
Analysis and validation of neural network approach for extraction of small-signal model parameters of microwave transistors.	1	0.41	2013
Accurate silicon dummy structure model for nonlinear microwave FinFET modeling	0	0.34	2010
Theoretical and experimental determination of onset and scaling of non-quasi-static phenomena for interdigitated fin field effect transistors.	0	0.34	2010
Temperature effects on DC and small signal RF performance of AlGaAs/GaAs HEMTs	1	0.48	2006
Microwave characterization and modeling of packaged HEMTs by a direct extraction procedure down to 30 K	0	0.34	2006
Temperature and bias investigation of self heating effect and threshold voltage shift in pHEMT's	5	1.46	2005
A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs	4	1.32	2004
Characterization techniques for temperature-dependent experimental analysis of microwave transistors	1	0.47	2003
Temperature-dependent noise characterization and modeling of on-wafer microwave transistors	3	2.22	2002
Determination of HEMT's noise parameters versus temperature using two measurement methods	2	2.63	1998
A study on the noise parameters of active devices based on a circuit model approach ~HEMTs\	0	0.34	1996

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