Name
Title | ||
|---|---|---|
Determination of HEMT's noise parameters versus temperature using two measurement methods |
Abstract | ||
|---|---|---|
A simplified approach for the determination of the noise parameters of high electron-mobility transistors (HEMT's) at microwave frequencies has already been presented for devices tested at room temperature. Such method relies on the extraction of a noisy circuit model from measurements of the scattering parameters and the noise figure at the fixed source impedance of 50 /spl Omega/ (namely, F/sub ... |
Year | DOI | Venue |
|---|---|---|
1998 | 10.1109/19.728779 | IEEE Transactions on Instrumentation and Measurement |
Keywords | Field | DocType |
HEMTs,Temperature,Circuit noise,Noise figure,Noise measurement,Scattering parameters,MODFETs,Microwave frequencies,Circuit testing,Impedance measurement | Output impedance,Microwave,Noise (electronics),Noise figure,Noise temperature,Y-factor,Electronic engineering,Scattering parameters,High-electron-mobility transistor,Mathematics | Journal |
Volume | Issue | ISSN |
47 | 1 | 0018-9456 |
Citations | PageRank | References |
2 | 2.63 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| A Caddemi | 1 | 20 | 12.87 |
| A. Di Paola | 2 | 2 | 2.97 |
| M. Sannino | 3 | 2 | 2.97 |