Author Info
Name
Affiliation
Papers
JANG-WOO RYU
DRAM Design Team, Memory Division, Samsung Electronics, Company, Ltd., Hwasung-city, Gyeonggi-Do, Korea
2
Collaborators
Citations 
PageRank 
23
82
6.61
Referers 
Referees 
References 
383
34
4
Search Limit
100383
Title
Citations
PageRank
Year
A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking.756.092012
A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking70.522011