Paper Info
Title
A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking
Abstract
Mobile DRAM is widely employed in portable electronic devices due to its fea ture of low power consumption. Recently, as the market trend renders integra tion of various features in one chip, mobile DRAM is required to have not only low power consumption but also high capacity and high speed. To attain these goals in mobile DRAM, we designed a 1Gb single data rate (SDR) Wide-I/O mobile SDRAM with 4 channels and 512 DQ pins, featuring 12.8GB/S data band width.
Year
DOI
Venue
2011
10.1109/ISSCC.2011.5746413
ISSCC
Keywords
Field
DocType
tsv-based stacking,byte rate 12.8 gbyte/s,low power consumption,voltage 1.2 v,single data rate,storage capacity 2 gbit,three-dimensional integrated circuits,low-power electronics,mobile wide-i/o dram,dram chips,wide-i/o mobile sdram,portable electronic devices,storage capacity 1 gbit,registers,mobile communication,low power electronics
Dram,Computer science,Communication channel,Electronic engineering,Input/output,Bandwidth (signal processing),Chip size,Die (manufacturing),Electrical engineering,Stacking,Low-power electronics
Conference
ISSN
ISBN
Citations 
0193-6530
978-1-61284-303-2
7
PageRank 
References 
Authors
0.52
0
23
Name
Order
Citations
PageRank
Jung-Sik Kim113811.69
Chi Sung Oh2938.94
Hocheol Lee3877.45
Dong-Hyuk Lee4125448.26
Hyong-Ryol Hwang5826.94
Sooman Hwang6826.61
Byongwook Na7837.99
Joungwook Moon8837.66
Jin-Guk Kim9959.18
Hanna Park10826.94
Jang-Woo Ryu11826.61
Kiwon Park12877.77
Sang-Kyu Kang1314212.20
Soyoung Kim1416822.15
Hoyoung Kim1513412.78
Jong-Min Bang16826.94
Hyunyoon Cho1711010.56
Min-Soo Jang189711.05
Cheolmin Han19826.61
Jung-Bae Lee2017917.70
Kyehyun Kyung2114218.84
Joo-Sun Choi2224629.16
Young-Hyun Jun2370.52