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STANISLAV TYAGINOV
Author Info
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Name
Affiliation
Papers
STANISLAV TYAGINOV
Institute for Microelectronics, TU Wien, Gußhausstraße 27-29, A-1040 Vienna, Austria
7
Collaborators
Citations
PageRank
53
3
6.69
Referers
Referees
References
27
41
7
Publications (7 rows)
Collaborators (53 rows)
Referers (27 rows)
Referees (41 rows)
Title
Citations
PageRank
Year
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs
0
0.34
2019
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants
0
0.34
2019
Full (V, V) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.
0
0.34
2019
Origins and implications of increased channel hot carrier variability in nFinFETs
3
4.66
2015
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs
0
0.34
2015
An analytical approach for physical modeling of hot-carrier induced degradation.
0
0.34
2011
Impact of O–Si–O bond angle fluctuations on the Si–O bond-breakage rate
0
0.34
2009
1