Name
Abstract | ||
|---|---|---|
We develop an analytical model for hot-carrier degradation based on a rigorous physics-based TCAD model. The model employs an analytical approximation of the carrier acceleration integral (calculated with our TCAD approach) by a fitting formula. The essential features of hot-carrier degradation such as the interplay between single-and multiple-electron components of Si–H bond dissociation, mobility degradation during interface state build-up, as well as saturation of degradation at long stress times are inherited. As a result, the change of the linear drain current can be represented by the analytical expression over a wide range of stress conditions. The analytical model can be used to study the impact of device geometric parameters on hot-carrier degradation. |
Year | DOI | Venue |
|---|---|---|
2011 | 10.1016/j.microrel.2011.07.089 | Microelectronics Reliability |
Keywords | Field | DocType |
physical model | Saturation (chemistry),Stress conditions,Electronic engineering,Degradation (geology),Acceleration,Dissociation (psychology),Engineering,Drain current | Journal |
Volume | Issue | ISSN |
51 | 9 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Stanislav Tyaginov | 1 | 3 | 6.69 |
| Ivan Starkov | 2 | 4 | 2.34 |
| Hubert Enichlmair | 3 | 3 | 1.60 |
| C. Jungemann | 4 | 0 | 0.34 |
| Jong Mun Park | 5 | 4 | 1.66 |
| E. Seebacher | 6 | 7 | 2.25 |
| R.L. de Orio | 7 | 25 | 4.03 |
| Hajdin Ceric | 8 | 20 | 6.01 |
| Tibor Grasser | 9 | 68 | 12.77 |