Author Info
Name
Affiliation
Papers
C.H. TUNG
Institute of Microelectronics, 11 Science Park Road, 117685 Singapore
4
Collaborators
Citations 
PageRank 
16
4
2.21
Referers 
Referees 
References 
11
8
2
Title
Citations
PageRank
Year
Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000°C and temperature for minimum low-K interfacial oxide for high-K dielectric on Si00.342007
Structure of the oxide damage under progressive breakdown10.522005
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM10.632003
Physical analysis of hard and soft breakdown failures in ultrathin gate oxides20.732002