Name
Abstract | ||
|---|---|---|
The I–V characteristics of ultra-thin gate oxides under progressive breakdown (BD) show a common behavior, indicative of well-defined general physical features of the BD spot. Transmission electron microscopy (TEM) observations give some hints about this structure and on this basis we propose a physical model of the post-BD current, which is in good agreement with data. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1016/j.microrel.2004.11.034 | Microelectronics Reliability |
Keywords | Field | DocType |
physical model,transmission electron microscopy | Nanotechnology,Oxide,Transmission electron microscopy,Chemistry | Journal |
Volume | Issue | ISSN |
45 | 5 | 0026-2714 |
Citations | PageRank | References |
1 | 0.52 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| F. Palumbo | 1 | 5 | 3.72 |
| G. Condorelli | 2 | 1 | 0.52 |
| S. Lombardo | 3 | 6 | 1.76 |
| K.L. Pey | 4 | 4 | 1.87 |
| C.H. Tung | 5 | 4 | 2.21 |
| L.J. Tang | 6 | 2 | 1.49 |