Name
Title | ||
|---|---|---|
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. |
Abstract | ||
|---|---|---|
In this paper we propose an experimental study, supported by numerical simulation, of the role of the parasitic transistor on the charge generation phenomenon observed during the impact of heavy ions on medium voltage power MOSFET. The amount of the generated charge is reliant on the gain of the BJT which decreases with an increase of the epitaxial layer thickness in high injection levels and low fields. The charge amplification can induce a premature damage of the device under test and then radically reduces its reliability to sustaining single event effects. (C) 2004 Elsevier Ltd. All fights reserved. |
Year | DOI | Venue |
|---|---|---|
2004 | 10.1016/j.microrel.2004.07.028 | MICROELECTRONICS RELIABILITY |
Field | DocType | Volume |
Device under test,Power semiconductor device,Voltage,Power MOSFET,Electronic engineering,Bipolar junction transistor,Engineering,Transistor,MOSFET,Single event upset | Journal | 44 |
Issue | ISSN | Citations |
9-11 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 0 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Francesco Velardi | 1 | 8 | 4.43 |
| F. Iannuzzo | 2 | 106 | 42.25 |
| Giovanni Busatto | 3 | 31 | 12.53 |
| A. Porzio | 4 | 14 | 5.02 |
| A. Sanseverino | 5 | 25 | 11.27 |
| Giuseppe Currò | 6 | 0 | 0.34 |
| Alessandra Cascio | 7 | 0 | 0.34 |
| Ferruccio Frisina | 8 | 0 | 0.34 |