Name
Title | ||
|---|---|---|
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors |
Abstract | ||
|---|---|---|
The aim of this work is to quantitatively investigate the physical origin of the temperature-dependent dynamic Ron in GaN based power transistors grown on silicon substrate. The analysis is based on combined trapping/detrapping measurements. Trapping was induced by exposing the devices to two different bias points: off-state bias (VGS=-10 V, VDS=100 V, and VB=0 V), and backgating bias (VGS=0 V, VDS=0 V, and VB=-100 V). The experimental data collected within this paper demonstrate the following relevant results: (i) when submitted to high temperature levels, dynamic Ron shows a significant increase; (ii) combined off-state stress and backgating tests suggest that trapping proceeds through the injection of electrons from the buffer towards traps located in the GaN, next to the channel region; (iii) the temperature-dependent dynamic Ron can be significantly reduced through the optimization of the growth and fabrication process. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/IRPS.2015.7112687 | IRPS |
Keywords | Field | DocType |
GaN, HEMT, defect, trapping, backgating | Gallium nitride,Analytical chemistry,Power semiconductor device,Electronic engineering,Trapping,Engineering,High-electron-mobility transistor,Temperature measurement,Optoelectronics,Silicon,Fabrication,Electron | Conference |
ISSN | Citations | PageRank |
1541-7026 | 1 | 0.63 |
References | Authors | |
0 | 9 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Meneghini | 1 | 23 | 10.17 |
| R. Silvestri | 2 | 1 | 0.63 |
| Stefano Dalcanale | 3 | 1 | 0.63 |
| Bisi, D. | 4 | 4 | 2.14 |
| Enrico Zanoni | 5 | 60 | 37.05 |
| Gaudenzio Meneghesso | 6 | 67 | 38.27 |
| Piet Vanmeerbeek | 7 | 2 | 1.71 |
| A. Banerjee | 8 | 1 | 1.30 |
| P. Moens | 9 | 11 | 8.32 |