Author Info
Name
Affiliation
Papers
YOUNG YONG BYUN
Memory Division, DRAM Design Team, Samsung Electronics, Hwaseong, South Korea
1
Collaborators
Citations 
PageRank 
25
1
0.37
Referers 
Referees 
References 
5
48
6
Title
Citations
PageRank
Year
A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme10.372021