Name
Abstract | ||
|---|---|---|
3D Monolithic Integration (3DMI) technology provides very high dense vertical interconnects with low parasitics. Previous 3DMI design approaches provide either cell-on-cell or transistor-on-transistor integration. In this paper we present 3D Cell-on-Buffer (3DCoB) as a novel design approach for 3DMI. Our approach provides a fully compatible sign-off physical implementation flow with the conventional 2D tools. We implement our approach on a set of benchmark circuits using 28nm-FDSOI technology. The sign-off performance results show 35% improvement compared to the same 2D design. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/ASPDAC.2014.6742870 | ASP-DAC |
Keywords | Field | DocType |
buffer circuits,integrated circuit design,integrated circuit interconnections,silicon-on-insulator,three-dimensional integrated circuits,2D design,2D tools,3D cell-on-buffer,3DCoB,3DMI design approach,3DMI technology,FDSOI technology,benchmark circuits,cell-on-cell transistor integration,monolithic 3D integrated circuit design approach,size 28 nm,transistor-on-transistor integration,very high dense vertical interconnects | Computer science,Circuit design,Full custom,Electronic engineering,Integrated circuit design,Physical design,Mixed-signal integrated circuit,Integrated circuit,Parasitic extraction,Integrated injection logic | Conference |
ISSN | Citations | PageRank |
2153-6961 | 3 | 0.58 |
References | Authors | |
8 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hossam Sarhan | 1 | 22 | 3.25 |
| Sebastien Thuries | 2 | 27 | 7.32 |
| Olivier Billoint | 3 | 33 | 8.59 |
| Fabien Clermidy | 4 | 797 | 61.56 |