Zhengxuan Zhang - Citegraph

Author Info

Name	Affiliation	Papers
ZHENGXUAN ZHANG	The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China	21
Collaborators	Citations	PageRank
40	15	8.64
Referers	Referees	References
68	87	31

Publications (21 rows)

Collaborators (40 rows)

Referers (68 rows)

Referees (87 rows)

Title	Citations	PageRank	Year
Substrate Effect On Radiation-Induced Charge Trapping In Buried Oxide For Partially-Depleted Soi Nmosfet	0	0.34	2020
Radiation-Enhanced Channel Length Modulation Induced By Trapped Charges In Buried Oxide Layer	0	0.34	2019
Total Dose Radiation Induced Changes Of The Floating Body Effects In The Partially Depleted Soi Nmos With Ultrathin Gate Oxide	0	0.34	2018
A Novel Highly Reliable And Low-Power Radiation Hardened Sram Bit-Cell Design	2	0.39	2018
A Novel Self-Recoverable And Triple Nodes Upset Resilience Dice Latch	3	0.40	2018
Improved Modular Convolution Neural Network for Human Pose Estimation.	0	0.34	2018
A Novel Seu Tolerant Memory Cell For Space Applications	0	0.34	2018
Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology.	0	0.34	2017
Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs.	0	0.34	2017
Radiation induced transconductance overshoot in the 130 nm partially-depleted SOI MOSFETs.	0	0.34	2017
Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation.	0	0.34	2016
Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs.	0	0.34	2016
Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment.	0	0.34	2014
Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.	3	0.83	2014
Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.	2	0.49	2013
Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs.	0	0.34	2013
Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology.	1	0.48	2012
Comparison of TID response in core, input/output and high voltage transistors for flash memory	1	0.37	2011
The impact of total ionizing radiation on body effect	0	0.34	2011
Impact of within-wafer process variability on radiation response	1	0.69	2011
Total ionizing dose effects in elementary devices for 180-nm flash technologies	2	0.60	2011