Name
Title | ||
|---|---|---|
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. |
Abstract | ||
|---|---|---|
The behavior of medium voltage commercial power MOSFETs, first degraded with increasing gamma-rays doses and subsequently irradiated with heavy ions, is presented. It is shown that the degradation of the gate oxide caused by the gamma irradiation severely corrupt the SEE robustness and drastically modify the physical behavior of the device under test after the impact of a heavy ion. A decrease of the critical voltages at which destructive burnouts and gate ruptures appear has been detected in all devices previously irradiated with gamma-rays, the amount of the critical voltage reduction is strictly related to the amount of the absorbed gamma-rays dose. Furthermore, at the failure voltage, the behavior of the device is affected by the conduction of a current through the gate oxide. Moreover the SEGR of the device appears at lower voltages due to the reduction of the Fowler-Nordheim limit in the gamma-irradiated devices. (C) 2012 Elsevier Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2012 | 10.1016/j.microrel.2012.06.153 | MICROELECTRONICS RELIABILITY |
Field | DocType | Volume |
Voltage reduction,Voltage,Power MOSFET,Irradiation,Electronic engineering,Time-dependent gate oxide breakdown,Gate oxide,Engineering,Ion,AND gate | Journal | 52 |
Issue | ISSN | Citations |
SP9-10 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 1 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| G. Busatto | 1 | 52 | 17.57 |
| V. De Luca | 2 | 0 | 0.34 |
| F. Iannuzzo | 3 | 106 | 42.25 |
| A. Sanseverino | 4 | 25 | 11.27 |
| F. Velardi | 5 | 31 | 12.32 |