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A. SANSEVERINO
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Name
Affiliation
Papers
A. SANSEVERINO
Dept. of Automation, Electromagnetism, Information Engineering and Industrial Mathematics, University of Cassino, Via G. Di Biasio, 43, 03043 Cassino (FR) – Italy
18
Collaborators
Citations
PageRank
38
25
11.27
Referers
Referees
References
53
37
27
Publications (18 rows)
Collaborators (38 rows)
Referers (53 rows)
Referees (37 rows)
Title
Citations
PageRank
Year
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation.
0
0.34
2018
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests.
0
0.34
2018
Measure of high frequency input impedance to study the instability of power devices in short circuit.
0
0.34
2018
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit.
3
1.06
2017
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT
2
0.77
2015
Thermal damage in SiC Schottky diodes induced by SE heavy ions.
0
0.34
2014
Turn-off instabilities in large area IGBTs.
0
0.34
2014
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit.
0
0.34
2013
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure.
0
0.34
2012
Reliability oriented design of power supplies for high energy physics applications.
6
1.38
2012
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs.
0
0.34
2011
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET
2
0.63
2010
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions
0
0.34
2009
Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure
3
0.84
2008
Experimental study of power MOSFET’s gate damage in radiation environment
2
0.79
2006
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET
7
2.08
2005
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure.
0
0.34
2004
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment
0
0.34
2003
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