Name
Abstract | ||
|---|---|---|
We report on the influence of different types of radiation on the nitride read-only memories (NROM (R)). The memory cells were irradiated by light ions (Boron). X-rays and gamma-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remained after gamma or X irradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation, the programmed devices remained stable up to the fluence of 10(11) ions/cm(2) (equivalent to 1 Mrad(Si) of TID tolerance). (C) 2010 Elsevier Ltd. All rights reserved. |
Year | DOI | Venue |
|---|---|---|
2010 | 10.1016/j.microrel.2010.07.068 | MICROELECTRONICS RELIABILITY |
Keywords | Field | DocType |
read only memory,threshold voltage,radiation dose | X-ray,Leakage (electronics),Nitride,Irradiation,Chemistry,Electronic engineering,Subthreshold conduction,Threshold voltage,Radiation,Radiation effect | Journal |
Volume | Issue | ISSN |
50 | SP9-11 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
13 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| S. Libertino | 1 | 0 | 1.35 |
| D. Corso | 2 | 0 | 0.34 |
| G. Murè | 3 | 0 | 0.34 |
| A. Marino | 4 | 0 | 0.34 |
| F. Palumbo | 5 | 5 | 3.72 |
| F. Principato | 6 | 2 | 1.43 |
| G. Cannella | 7 | 0 | 0.34 |
| T. Schillaci | 8 | 0 | 0.34 |
| S. Giarusso | 9 | 0 | 0.34 |
| F. Celi | 10 | 0 | 0.34 |
| M. Lisiansky | 11 | 0 | 0.68 |
| Y. Roizin | 12 | 0 | 0.34 |
| S. Lombardo | 13 | 6 | 1.76 |