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M. PORTI
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Name
Affiliation
Papers
M. PORTI
Dept. Enginyeria Electrònica, Universitat Autònoma de Barcelona, Edifici Q, 08193 Bellaterra, Spain
7
Collaborators
Citations
PageRank
22
5
3.78
Referers
Referees
References
24
2
1
Publications (7 rows)
Collaborators (22 rows)
Referers (24 rows)
Referees (2 rows)
Title
Citations
PageRank
Year
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements
1
0.63
2010
Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale
0
0.34
2009
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors
2
0.91
2008
Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM
0
0.34
2007
Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM
0
0.34
2003
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM
1
0.45
2003
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope
1
0.77
2001
1